2N7336

2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm (inches) 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS BVDSS 8 19.507 ± 0.432 (0.768 ± 0.017) 2.134 (0.084) 0.457 ± 0.102 (0.018 ± 0.004) ±100V N-CHANNEL P-CHANNEL 9.525 ± 0.635 (0.375 ± 0.025) 6.426 ± 0.305 (0.253 ± 0.012) 14 ID(cont) RDS(on) FEATURES 1A 0.7Ω -0.75A 1.4Ω 1 7 AVALANCHE ENERGY RATED 1.422 ± 0.102 (0.056 ± 0.004) 2.54 (0.100) HERMETICALLY SEALED DYNAMIC dv/dt RATING SIMPLE DRIVE REQUIREMENTS www.DataSheet4U.com FOR AUTOMATIC INSERTION 5—Gate 2 6—Source 2 7—Drain 2 8—Drain 3 9—Source3 10—Gate 3 12—Gate 4 13—Source 4 14—Drain 4 N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL 1—Drain 1 2—Source 1 3—Gate 1 SIMPLE DRIVE REQUIREMENTS EASE OF PARALLELING 2 N-CHANNEL/2 P-CHANNEL CO-PACKAGED HEXFETS P-CHANNEL ±20V -0.75A -0.5A -3A 1.4W 0.011W/°C 75mJ -5.5V/ns –55 to 150°C ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) N-CHANNEL VGS ID ID IDM PD EAS dv/dt TJ , Tstg RθJC RθJCA Gate – Source Voltage Continuous Drain Current (VGS = 10V , Tcase = 25°C) Continuous Drain Current (VGS = 10V , Tcase = 100°C) Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient ±20V 1.A 0.6A 4A 1.4W 0.011W/°C 75mJ 5.5V/ns –55 to 150°C 6.25°C/W 175°C/W Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VD...