POWER MOSFETS. 2N7336 Datasheet

2N7336 MOSFETS. Datasheet pdf. Equivalent

Part 2N7336
Description 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS
Feature 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm (inches) 14 LEAD DUAL IN LINE QUAD N & P CHANNEL .
Manufacture Sames
Datasheet
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2N7336
2N7336
IRFG6110
MECHANICAL DATA
Dimensions in mm (inches)
14 LEAD DUAL IN LINE QUAD
N & P CHANNEL
POWER MOSFETS
2.134
(0.084)
19.507 ± 0.432
(0.768 ± 0.017)
0.457 ± 0.102
(0.018 ± 0.004)
14
8
BVDSS
±100V
N-CHANNEL P-CHANNEL
ID(cont) 1A
RDS(on) 0.7
-0.75A
1.4
1
1.422 ± 0.102
(0.056 ± 0.004)
2.54
(0.100)
7
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N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL
1—Drain 1 5—Gate 2 8—Drain 3 12—Gate 4
2—Source 1 6—Source 2 9—Source3 13—Source 4
3—Gate 1 7—Drain 2 10—Gate 3 14—Drain 4
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
• FOR AUTOMATIC INSERTION
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
• 2 N-CHANNEL/2 P-CHANNEL
CO-PACKAGED HEXFETS
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) N-CHANNEL
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current (VGS = 10V , Tcase = 25°C)
1.A
ID
Continuous Drain Current (VGS = 10V , Tcase = 100°C)
0.6A
IDM Pulsed Drain Current
4A
PD Power Dissipation @ Tcase = 25°C
1.4W
Linear Derating Factor
0.011W/°C
P-CHANNEL
±20V
-0.75A
-0.5A
-3A
1.4W
0.011W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
75mJ
5.5V/ns
75mJ
-5.5V/ns
TJ , Tstg
RθJC
RθJCA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to 150°C –55 to 150°C
6.25°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%
2) @ VDD = 25V , L 112mH , RG = 25, Peak IL = 1A , Starting TJ = 25°C
3) @ ISD 1A , di/dt 75A/µs , VDD BVDSS , TJ 150°C , Suggested RG = 24
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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2N7336
2N7336
IRFG6110
ELECTRICAL CHARACTERISTICS FOR N-CHANNEL (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
BVDSS Temperature Coefficient of
TJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 0.6A
ID = 1A
ID = 250µA
IDS = 0.60A
VDS = 0.8VDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
VDS = 0.5VDS
ID = 1A
VDD = 50V
ID = 1A
RG = 24
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current 2
VSD Diode Forward Voltage 1
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn–On Time
IS = 1.0A
TJ = 25°C
VGS = 0
IF = 1A
TJ = 25°C
di / dt 100A/µs VDD 50V
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance (from centre of drain pad to die)
LS Internal Source Inductance (from centre of source pad to end of source bond wire)
Min. Typ. Max. Unit
100 V
0.13 V / °C
0.70
0.80
2 4V
0.86 S((ΩΩ)
25
µA
250
100
–100
nA
180
82 pF
15
15
7.5 nC
7.5
20
25
ns
40
40
1
4
1.5
Negligible
200
0.83
A
V
ns
µC
4.0
nH
6.0
Notes
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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