N-Channel MOSFET. AOD4120 Datasheet

AOD4120 MOSFET. Datasheet pdf. Equivalent

Part AOD4120
Description N-Channel MOSFET
Feature AOD4120 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses adva.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOD4120 Datasheet



AOD4120
AOD4120
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4120 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOD4120 is Pb-free (meets ROHS & Sony
259 specifications). AOD4120L is a Green Product
ordering option. AOD4120 and AOD4120L are
electrically identical.
TO-252
D-PAK
Features
1.4
VDS (V) = 20V
ID = 25A (VGS = 10V)
RDS(ON) <18 m(VGS = 10V)
RDS(ON) <25 m(VGS = 4.5V)
RDS(ON) <75 m(VGS = 2.5V)
UIS Teste1d93
Rg,Ciss,Co1s8s,Crss Tested
D
Top View
Drain Connected to
Tab
G
S
GD S
www.DataSheet4U.com
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
VGS
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±16
25
23
75
13
25
33
16.7
2.5
1.7
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17
40
3.6
Max
25
50
4.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AOD4120
AOD4120
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=55°C
1
5
uA
IGSS Gate-Body leakage current
VDS=0V, VGS=±16V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.6 1.26
2
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
75
A
VGS=10V, ID=20A
14 18
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
TJ=125°C
21
20
25 m
VGS=2.5V, ID=4A
57 75
gFS Forward Transconductance
VDS=5V, ID=20A
19 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current G
0.77 1
30
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
900
162
105
1.8 2.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=0.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
15
7.2
1.8
2.8
4.5
9.2
18.7
3.3
18
9.5
18
9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of
T A =25°C. The
R θJA is measured
Power dissipation
with the device mounted on 1in 2 FR-4 board with
P DSM is based on R θJA and the maximum allowed
2oz. Copper, in a still air environment with
junction temperature 0of 150°C. The value in
any
given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.





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