HEXFET Power MOSFET
PD -95528
SMPS MOSFET
Applications
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IRF3707PbF IRF3707SPbF IRF3707LPbF
HEXFET® Power MOSFET
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High Frequency DC-D...
Description
PD -95528
SMPS MOSFET
Applications
l
IRF3707PbF IRF3707SPbF IRF3707LPbF
HEXFET® Power MOSFET
l l
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Lead-Free
VDSS
30V
RDS(on) max
12.5mΩ
ID
62A
Benefits l Ultra-Low Gate Impedance
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Very Low RDS(on) Fully Characterized Avalanche Voltage and Current
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
TO-220AB IRF3707
D2Pak IRF3707S
TO-262 IRF3707L
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG
Max.
30 ± 20 62 52 248 87 61 0.59 -55 to + 175
Units
V V A W W mW/°C °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)*
Typ.
––– 0.50 ––– –––
Max.
1.73 ––– 62 40
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
www.irf.com
1
7/20/04
IRF3707S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage ...
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