MGF0912A Datasheet PDF - Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION The MGF0912A GaAs FET wit...

MITSUBISHI SEMICONDUCTOR MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAWING Unit : millimeters FEATURES High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm High power gain Gp=10.5dB(TYP.) @f=1.9GHz High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm Hermetic Package ‡A ƒÓ2.2 0.6}0.2 ‡B ‡A APPLICATION For L/S Band power amplifiers QUALITY GG Vds=10V Ids=2.6A Rg=50Ω 9.0}0.2 (Ta=25°C) www.DataSheet4U.com Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg 14.0 0.65 Delivery Tray 1.650.1 RECOMMENDED BIAS CONDITIONS 5.0 Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 10 -30 63 53.6 175 -65 to +175 Unit V V A mA mA W °C °C GF-7 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN Electrical characteristics Symbol IDSS VGS(off) gm Po ηadd GLP Rth(ch-c) (Ta=25°C) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=20mA VDS=3V,ID=2.6A VDS=10V,ID=2.6A,f=1.9GHz Pin=33dBm VDS=10V,ID=2.6A,f=1.9GHz ∆Vf Method -2.0 40.5 9.5 - Limits Typ. -3 41.5 38 10.5 2.3 Max. 10 -5.0 3 Unit A V S dBm % dB °C...