MGF0916A Datasheet PDF - Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET...

MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm High power gain Gp=19dB(TYP.) @f=1.9GHz High power added efficiency ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm Hermetic Package APPLICATION For UHF Band power amplifiers Fig.1 QUALITY GG RECOMMENDED BIAS CONDITIONS Vds=6V Ids=100mA Rg=1kΩ Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25°C) Absolute maximum ratings www.DataSheet4U.com Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -8 -8 250 -0.6 1.5 1.5 175 -65 to +175 (Ta=25°C) Unit V V mA mA mA W °C °C Electrical characteristics Symbol IDSS VGS(off) gm Po ηadd GLP NF Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=0.1mA VDS=3V,ID=100mA VDS=6V,ID=100m A,f=1.9GHz Pin=5dBm VDS=6V,ID=100mA,f=1.9GHz ∆Vf Method 150 -1.5 - Limits Typ. 200 90 23 30 19 1.0 70 Max. 250 -4.5 100 Unit mA V mS dBm % dB dB °C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mi...