MGF0917A Datasheet PDF - Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET...

MITSUBISHI SEMICONDUCTOR MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm High power gain Gp=21dB(TYP.) @f=1.9GHz High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=4dBm Hermetic Package APPLICATION For UHF Band power amplifiers Fig.1 QUALITY GG RECOMMENDED BIAS CONDITIONS Vds=10V Ids=75mA Rg=2kΩ Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25°C) Absolute maximum ratings www.DataSheet4U.com Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 200 -0.6 2.5 2 175 -65 to +175 (Ta=25°C) Unit V V mA mA mA W °C °C Electrical characteristics Symbol IDSS VGS(off) gm Po ηadd GLP NF Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=0.5mA VDS=3V,ID=75mA VDS=10V,ID=75mA,f=1.9GHz Pin=4dBm VDS=10V,ID=75mA,f=1.9GHz ∆Vf Method -1.0 23 - Limits Typ. 150 70 24 38 21 0.9 55 Max. 200 -5.0 75 Unit mA V mS dBm % dB dB °C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsub...