Power MOSFET. IRF610A Datasheet

IRF610A MOSFET. Datasheet pdf. Equivalent

Part IRF610A
Description Advanced Power MOSFET
Feature Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input .
Manufacture Fairchild Semiconductor
Datasheet
Download IRF610A Datasheet

Advanced Power MOSFET FEATURES Avalanche Rugged Technology R IRF610A Datasheet
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc IRF610A Datasheet
Recommendation Recommendation Datasheet IRF610A Datasheet




IRF610A
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Advanced Power MOSFET
IRF610A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 1.169 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC)
Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 200 V
RDS(on) = 1.5
ID = 3.3 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
200
3.3
2.1
10
+_ 30
44
3.3
3.8
5.0
38
0.31
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
R θCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
3.28
--
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation



IRF610A
IRF610A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oCunless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- --
-- 0.23 --
2.0 -- 4.0
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V VGS=0V,ID=250 µA
V/oC ID=250 µA See Fig 7
V VDS=5V,ID=250 µA
nA VGS=30V
VGS=-30V
VDS=200V
µ A VDS=160V,TC=125 oC
Static Drain-Source
On-State Resistance
-- -- 1.5 VGS=10V,ID=1.65A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1.31 -- VDS=40V,ID=1.65A
O4
-- 160 210
--
35
44
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 14 18
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 10 30
-- 10 30
VDD=100V,ID=3.3A,
-- 20 50 ns RG=24
-- 12 35
See Fig 13
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller”) Charge
-- 7 10
VDS=160V,VGS=10V,
-- 1.5
-- 3.5
--
--
nC
ID=3.3A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 3.3
Integral reverse pn-diode
A
-- 10
in the MOSFET
O4 -- -- 1.5 V TJ=25oC,IS=3.3A,VGS=0V
-- 107 -- ns TJ=25oC,IF=3.3A
-- 0.33 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=6mH, IAS=3.3A, VDD=50V, RG=27, Starting TJ =25 oC
O3 ISD<_ 3.3A, di/dt <_ 140A/ µs, VDD <_BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µ s, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature





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