Document
PD - 9.1329B
IRLIZ34N
HEXFET® Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.035Ω ID = 22A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation www.DataSheet4U.com capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
22 15 110 37 0.24 ±16 110 16 3.7 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient
Min.
–––– ––––
Typ.
–––– ––––
Max.
4.1 65
Units
°C/W 8/25/97
IRLIZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf LD LS Ciss Coss Crss C
Min. 55 ––– ––– ––– ––– 1.0 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.065 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 8.9 100 29 21
Max. Units Conditions ––– V VGS = 0V.