2N6660X

2N6660X MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. Switching Regulators Converters Motor Drivers 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 2.54 (0.100) 3 www.DataSheet4U.com 0.71 (0.028) 0.86 (0.034) 45˚ TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain CASE – Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS VGS ID ID IDM PD PD Tj Tstg TL Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current * Power Dissipation Power Dissipation Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) @ TCASE = 25°C @ TCASE = 100°C @ TCASE = 25°C @ TCASE = 100°C 60V ±40V ±1.1A ±0.8A ±3A 6.25W 2.5W –55 to 150°C –55 to 150°C 300°C Operating Junction Temperature Range Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC: 7083 iss 1 2N6660X ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter STATIC CHARACTERISTICS BVDSS VGS(th) IGSS Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Body Leakage Current VGS = 0V VDS = VGS VGS = ±15V VDS = 0V TCASE = 125°C VDS = Max. Ratings VGS = 0V IDSS ID(on)* Zero Gate Voltage Drain Current On–State...