HEXFET Power MOSFET
PD - 94225
IRF7331
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available ...
Description
PD - 94225
IRF7331
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel
VDSS
20V
RDS(on) max (mΩ)
30@VGS = 4.5V 45@VGS = 2.5V
ID
7.0A 5.6A
These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Description
S1 G1 S2 G2
1
8 7
D1 D1 D2 D2
2
3
6
4
5
T o p V ie w
SO-8
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Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 7.0 5.5 28 2.0 1.3 16 ± 12 -55 to + 150
Units
V A W mW/°C V °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –...
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