IRF9Z30PBF

PD- 96095 IRF9Z30PbF Features P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free HEXFET® POWER MOSFET Product Summary Part Number IRF9Z30PbF VDS(V) -50 D RDSON (Ω) 0.14 ID (A) -18 G Description S TO-220AB www.DataSheet4U.com The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse amplifiers. Absolute Maximum Ratings Parameter VDS VDGR VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C ILM IL TJ TSTG Lead Temperature Drain-to-Source Voltage Drain-to-Gate Voltage (RGS =20KΩ) Gate-to-Source Voltage Continuous Drain Current...