DatasheetsPDF.com

MGFC39V5867 Dataheets PDF



Part Number MGFC39V5867
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description C band internally matched power GaAs FET
Datasheet MGFC39V5867 DatasheetMGFC39V5867 Datasheet (PDF)

< C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.75 GHz BAND / 8W DESCRIPTION The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.) @f=5.8 – 6.75GHz  High power gain GLP=9dB (TYP.) @f=5.8 – 6.75GHz APPLICATION  VSAT 2MIN 12.9 +/-0..

  MGFC39V5867   MGFC39V5867


Document
< C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.75 GHz BAND / 8W DESCRIPTION The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.) @f=5.8 – 6.75GHz  High power gain GLP=9dB (TYP.) @f=5.8 – 6.75GHz APPLICATION  VSAT 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 11.3 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 0.2 12.0 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=2.4A  RG=50ohm GF-8 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 ID Drain current 7.5 IGR Reverse gate current -20 IGF Forwa.


MGF4961B MGFC39V5867 MGFC40V3742


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)