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< C band internally matched power GaAs FET >
MGFC39V5867
5.8 – 6.75 GHz BAND / 8W
DESCRIPTION
The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=8W (TYP.) @f=5.8 – 6.75GHz High power gain
GLP=9dB (TYP.) @f=5.8 – 6.75GHz
APPLICATION
VSAT
2MIN
12.9 +/-0.2
2MIN
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3 (1) 0.6 +/-0.15
(2) (2) R-1.6
(3) 10.7 17.0 +/-0.2
11.3
0.1 2.6 +/-0.2
4.5 +/-0.4 1.6
0.2
12.0
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=2.4A RG=50ohm
GF-8
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID Drain current
7.5
IGR Reverse gate current
-20
IGF Forwa.