MGFC45B3436B

< C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class AB operation Internally matched to 50(ohm) system  High output power Po(SAT)=30W (TYP.) @f=3.4 – 3.6GHz  High power gain GLP=11.0dB (TYP.) @f=3.4 – 3.6GHz  Distortion ACP=-45dBc (TYP.) @f=3.4 – 3.6GHz RECOMMENDED BIAS CONDITIONS  VDS=12V  ID=0.8A  RG=12ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -10 MAXID Maximum drain current 10 PT *1 Total power dissipation 78 Tch Cannel temperature 175 Tstg Storage temperature *1 : Tc=25C -65 to +175 Unit V V A W C C Electrical characteristics (Ta=25C) Symbol Parameter Test conditi...