Document
Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier • Excellent ESD performance
typical value 1000 V (HBM) • Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads • Qualification report according to AEC-Q101 available
BFP540FESD
3 2
4 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP540FESD
Marking
Pin Configuration
AUs 1=B 2=E 3=C 4=E -
-
Package TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage
Collector current Base current Total power dissipation1) TS ≤ 80 °C Junction temperature Storage temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5 4 10 10 1 80 8 250
150 -55 ... 150
Unit V
mA mW °C
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BFP540FESD
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 280
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured
V(BR)CEO 4.5
5
-V
ICES
- - 10 µA
ICBO
- - 100 nA
IEBO
- - 10 µA
hFE 50 110 170 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP540FESD
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency IC = 50 mA, VCE = 4 V, f = 1 GHz
fT
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded
Ccb
21 30
- GHz
- 0.16 0.26 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded
Cce - 0.4 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Ceb - 0.55 -
Minimum noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz Third order intercept point at output2)
NFmin Gms Gma |S21e|2 IP3
dB - 0.9 1.4 - 1.3 -
- 20 - dB
- 14.5 - dB
15.5 -
18 13 24.5
dB -
- dBm
VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz 1dB compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
P-1dB
- 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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PTOT
Total power dissipation Ptot = ƒ(TS)
300 mW
200 150 100
50 00 30 60 90 °C 150
TS
BFP540FESD
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Package TSFP-4
BFP540FESD
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BFP540FESD
Edition 2009-11-16
Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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