DatasheetsPDF.com

BFP540FESD Dataheets PDF



Part Number BFP540FESD
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFP540FESD DatasheetBFP540FESD Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • Excellent ESD performance typical value 1000 V (HBM) • Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available BFP540FESD 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540FESD Marking Pin Configuration AUs 1=B.

  BFP540FESD   BFP540FESD


Document
Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • Excellent ESD performance typical value 1000 V (HBM) • Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available BFP540FESD 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540FESD Marking Pin Configuration AUs 1=B 2=E 3=C 4=E - - Package TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 80 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the emitter lead at the soldering point to the pcb Value 4.5 4 10 10 1 80 8 250 150 -55 ... 150 Unit V mA mW °C 1 2013-09-05 BFP540FESD Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 280 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured V(BR)CEO 4.5 5 -V ICES - - 10 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 110 170 - 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-05 BFP540FESD Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 4 V, f = 1 GHz fT Collector-base capacitance VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb 21 30 - GHz - 0.16 0.26 pF Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.4 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.55 - Minimum noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz Third order intercept point at output2) NFmin Gms Gma |S21e|2 IP3 dB - 0.9 1.4 - 1.3 - - 20 - dB - 14.5 - dB 15.5 - 18 13 24.5 dB - - dBm VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz 1dB compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz P-1dB - 11 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2013-09-05 PTOT Total power dissipation Ptot = ƒ(TS) 300 mW 200 150 100 50 00 30 60 90 °C 150 TS BFP540FESD 4 2013-09-05 Package TSFP-4 BFP540FESD 5 2013-09-05 BFP540FESD Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2013-09-05 .


B84143-A180-R BFP540FESD HAT2166H


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)