IRGB14C40LPBF

PD - 95193A Ignition IGBT Features • Most Rugged in Industry • Logic-Level Gate Drive • > 6KV ESD Gate Protection • Low Saturation Voltage • High Self-clamped Inductive Switching Energy • Lead-Free Description The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. www.DataSheet4U.com IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF •BVCES = 370V min, 430V max •IC @ TC = 110°C = 14A •VCE(on) typ= 1.2V @7A @25°C • IL(min)=11.5A @25°C,L=4.7mH Gate R1 R2 Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. Absolute Maximum Ratings Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 6 11.5 Unit V A A mA mA tPK = 1ms, f = 100Hz V W W °C °C KV C = 100pF, R = 1.5K ohm A L = 4.7mH, T = 25°C Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Cu...