MRF5P21240R6 Datasheet - Motorola





MRF5P21240R6 Datasheet - RF POWER FIELD EFFECT TRANSISTOR

MRF5P21240R6   MRF5P21240R6  

Datasheet: MRF5P21240R6 datasheet

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Description: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order th is document by MRF5P21240/D The RF Sub –Micron MOSFET Line RF Power Field E ffect Transistor Designed for W–CDMA base station applications with frequenc ies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB fo r PCN–PCS/cellular radio and WLL appl ications. • Typical 2–carrier W–C DMA Performance for VDD = 28 Volts, IDQ = 2 x 1100 mA, f1 = 2135 MHz, f2 = 214 5 MHz, Channel Bandwidth = 3.84 MHz, Ad jacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Disto rtion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Pe


Manufacture Part Number Description

Motorola

MRF5P21240R6

RF POWER FIELD EFFECT TRANSISTOR




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