MRF6V2010NBR1

Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain — 23.9 dB Drain Efficiency — 62% Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features Integrated ESD Protection Excellent Thermal Stability Facilitates Manual Gain Control, ALC and Modulation Techniques 200°C Capable Plastic Package RoHS Compliant TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V2010NR1 MRF6V2010NBR1 10 - 450 MHz, 10 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6V2010NR1 CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6V2010NBR1 www.DataSheet4U.com Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +110 - 0.5, +10 - 65 to +150 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 10 W CW Symbol ...