HIGH POWER GaAs FET
MSC8004
HIGH POWER GaAs FET
FEATURES INCLUDE:
•
FET PACKAGE TYPE 30
High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz H...
Description
MSC8004
HIGH POWER GaAs FET
FEATURES INCLUDE:
FET PACKAGE TYPE 30
High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz High power gain: GLP = 5 dB (TYP) @ 12 GHz High power added efficiency: Hadd = 18% (TYP) @ 12 GHz
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APPLICATIONS:
S to Ku Band Power Amplifiers
TRANS1.SYM
ELECTRICAL SPECIFICATIONS
SYMBOL
IDDS VGS (off) VDS = 3.0 V VDS = 3.0 V
TA = 25 C
O
TEST CONDITIONS
SATURATED DRAIN CURRENT
MINIMUM TYPICAL MAXIMUM
850 -2 1100 -3 1400 -5
UNITS
mA V
VGS = 0 V ID = 1.0 mA
GATE TO SOURCE CUT-OFF VOLTAGE
A D V A N C E D S E M I C O N D U C T O R, I N C.
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Specifications are subject to change without notice.
REV. A
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