MSC80186

MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .230 4L STUD (S027) hermetically sealed ORDER CODE MSC80186 BRANDING 80186 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter PDISS IC VCE TJ TSTG Power Dissipation Device Bias Current (see Safe Area) — 500 20 200 − 65 to +200 W mA V °C °C Collector-Emitter Bias Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 17 °C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC80186 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V IE = 0mA IC = 0mA IB = 0mA IC = mA 50 3.5 20 — 15 — — — — — — — — 1.0 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit G P* ∆ GP * COB * Note: f = 2.0 GHz f = 2.0 GHz f = 1 MHz POUT = 30.0 dBm POUT = 30.0 dBm VCB = 28 V ...