MSC80915
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC80915 is Designed for Class A, Common Emitter Applica...
MSC80915
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI MSC80915 is Designed for Class A, Common Emitter Applications to 2.3 GHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES INCLUDE:
Gold Metalization Emitter Ballasting
G L H J F I K M NP
MAXIMUM RATINGS
IC VCC
DISS www.DataSheet4U.com
DIM A B C D
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78
.032 / 0.81
300 mA 20 V 5.0 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 35 C/W
O O O O O O
.255 / 6.48 .132 / 3.35
E F
.117 / 2.97
P
G H I J K
.570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75
TJ TSTG θJC
L M N P
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICEO hFE Cob Pg P1db IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 18 V VCE = 5.0 V VCB = 28 V VCE = 18 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50 20 3.5 0.5
UNITS
V V V mA --pF dB dBm
IC = 100 mA f = 1.0 MHz IC = 140 mA fo = 2.0 GHz
15
85
120 3.0
7.5 +28
8.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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