MSC81035M

MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . www.DataSheet4U.com REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN .280 2LFL (S068) epoxy sealed ORDER CODE MSC81035M BRANDING 81035M PIN CONNECTION DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MSC81035M is housed in the IMPAC ™ package with internal input matching. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 150 3.0 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.0 °C/W *Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. September 2, 1994 1/4 MSC81035M ELECTRICAL SPECIFICATIONS (T case =...