MSC81111

MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC81111 BRANDING 81111 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81111 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 18.75 600 35 200 − 65 to +200 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 8.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81111 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 200mA 45 3.5 45 — 15 — — — — — — — — 1.0 120 V V V mA — Test Conditions Value...