MSC81118
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
EMITTER BALLASTED VSWR CAPABILITY ∞...
MSC81118
RF & MICROWAVE
TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 2.0 W MIN. WITH 10 dB GAIN @ 1.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE MSC81118 BRANDING 81118
PIN CONNECTION
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DESCRIPTION The MSC81118 is a common base hermetically sealed silicon
NPN microwave
transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC81118 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 75°C)
6.25 200 35 200 − 65 to +200
W mA V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/5
MSC81118
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 100mA
45 3.5 45 — 15
— — — — —
— — — 0.5 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f ...