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MSC81450M Dataheets PDF



Part Number MSC81450M
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Datasheet MSC81450M DatasheetMSC81450M Datasheet (PDF)

MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LF L (S038) hermetically sealed ORDER CODE MSC81450M BRANDING 81450M PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is ca.

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MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LF L (S038) hermetically sealed ORDER CODE MSC81450M BRANDING 81450M PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch at any phase angle under full rated conditions. The MSC81450M is housed in the unique BIGPAC™ package with internal input/output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 910 28 55 250 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.15 °C/W *Applies only to rated RF amplifier operation MSC81450M ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Symbo l T est Con ditio ns Value Min. Typ . Max. Un it BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbo l IC = 15mA IE = 1mA IC = 50mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 1A 65 3.5 65 — 15 — — — — — — — — 35 120 V V V mA — Test Con dition s Value Min . Typ . Max. Unit POUT ηc GP Note: f = 1090 MHz f = 1090 MHz f = 1090 MHz = = 10 µ Sec 1% PIN = 90 W PIN = 90 W PIN = 90 W VCC = 50 V VCC = 50 V VCC = 50 V 450 40 7.0 500 — — — — — W % dB Pul se Width Duty Cycle TEST CIRCUIT Ref.: Dwg. No. C125363 All dimensions are in inches. MSC81450M PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0212 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .


MSC8144 MSC81450M MSC82001


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