MSC83305
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMI...
MSC83305
RF & MICROWAVE
TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE BRANDING 83305 MSC83305
PIN CONNECTION
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DESCRIPTION The MSC83305 is a common base hermetically sealed silicon
NPN microwave power
transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 50˚C)
17.6 700 30 200 − 65 to +200
W mA V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 8.5 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/5
MSC83305
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA
45 3.5 45 — 30
— — — — —
— — — 0.5 300
V V V mA —
Test Conditions
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