MW7IC18100NBR1

Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA. Final Application Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 Watts CW, 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain — 30 dB Power Added Efficiency — 48% GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 = 800 mA, Pout = 40 Watts Avg., 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain — 31 dB Power Added Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 80 dBc EVM — 1.5% rms Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 120 W CW Pout. Features Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters On - Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection 200°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC18100NR1 MW7IC18100GN...