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MW7IC18100NR1 Dataheets PDF



Part Number MW7IC18100NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet MW7IC18100NR1 DatasheetMW7IC18100NR1 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA. Final Application • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, P.

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Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA. Final Application • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 Watts CW, 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain — 30 dB Power Added Efficiency — 48% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 = 800 mA, Pout = 40 Watts Avg., 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain — 31 dB Power Added Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 80 dBc EVM — 1.5% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 120 W CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618 - 01 TO - 270 WB - 14 PLASTIC MW7IC18100NR1 CASE 1621 - 01 TO - 270 WB - 14 GULL PLASTIC MW7IC18100GNR1 www.DataSheet4U.com CASE 1617 - 01 TO - 272 WB - 14 PLASTIC MW7IC18100NBR1 VDS1 RFin RFout/VDS2 VGS1 VGS2 Quiescent Current Temperature Compensation (1) NC VDS1 NC NC NC RFin RFin NC VGS1 VGS2 VDS1 NC 1 2 3 4 5 6 7 8 9 10 11 12 14 RFout /VDS2 13 RFout /VDS2 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007. All rights reserved. MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +65 - 0.5, +6 - 65 to +200 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case GSM Application (Pout = 100 W CW) Stage 1, 28 Vdc, IDQ1 = 180 mA Stage 2, 28 Vdc, IDQ2 = 1000 mA Symbol RθJC Value (1,2) 2.0 0.51 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class O (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Power Gain Input Return Loss Power Added Efficiency Pout @ 1 dB Compression Point, CW Symbol Gps IRL PAE P1dB Min 27 — 45 100 Typ 30 - 15 48 112 Max 31 - 10 — — Unit dB dB % W Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W CW, IDQ1 = 180 mA, IDQ2 = 1000 mA, f = 1990 MHz. Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 215 mA, IDQ2 = 800 mA, Pout = 40 W Avg., 1805 - 1880 MHz or 1930 - 1990 MHz EDGE Modulation. Power Gain Power Added Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps PAE EVM SR1 SR2 — — — — — 31 35 1.5 - 63 - 80 — — — — — dB % % rms dBc dBc 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Gain Flatness in 60 MHz Bandwidth @ Pout = 100 W CW Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 100 W CW Average Group Delay @ Pout = 100 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 100 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to.


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