MOSFET Power Module
APTM100H35FT
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25...
Description
APTM100H35FT
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
G1 S1 Q2 O UT1 O UT2 Q4
G3 S3
G2 S2 NT C1 0/VBUS NT C2
G4 S4
www.DataSheet4U.com
Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower....
Similar Datasheet