APTM100H35FT

APTM100H35FT Full - Bridge MOSFET Power Module VBUS Q1 Q3 VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 S1 Q2 O UT1 O UT2 Q4 G3 S3 G2 S2 NT C1 0/VBUS NT C2 G4 S4 www.DataSheet4U.com Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower....