APTM100UM45D-ALN

APTM100UM45D-AlN Single switch with Series diode MOSFET Power Module SK S D VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Application Zero Current Switching resonant mode G DK www.DataSheet4U.com Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100UM45D-AlN – Rev 0 July, 2004 Max ratings 1000 215 160 860 ±30 45 5000 30 50 3200 Unit V A V mΩ W A APTM100UM45D-AlN All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(...