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APTM10DAM02

Advanced Power Technology

MOSFET Power Module

APTM10DAM02 Boost chopper MOSFET Power Module VBUS CR1 VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C...


Advanced Power Technology

APTM10DAM02

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Description
APTM10DAM02 Boost chopper MOSFET Power Module VBUS CR1 VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features Q2 G2 S2 0/VBUS Benefits S2 G2 www.DataSheet4U.com VBUS 0/VBUS OUT Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10DAM02– Rev 0 May, 2005 Max ratings 100 495 370 1900 ±30 2.5 1250 100 50 3000 Unit V A V mΩ W A APTM10DAM02 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Z...




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