APTM10DUM02

APTM10DUM02 Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies G1 G2 S1 S S2 G1 www.DataSheet4U.com D1 S D2 Features Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile S1 S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10DUM02– Rev 0 May, 2005 Max ratings 100 495 370 1900 ±30 2.5 1250 100 50 3000 Unit V A V mΩ W A APTM10DUM02 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Ga...