MOSFET Power Module
APTM10HM05F
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°...
Description
APTM10HM05F
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
G1 OUT1 OUT2
G3
S1 Q2
S3 Q4
G2
G4
S2
0/VBUS
S4
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OUT1 G1 S1 VBUS 0/VBUS G2 S2
S3 G3 OUT2
S4 G4
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM10HM05F– Rev 0 May, 2005
Tc = 25°C
Max ratings 100 278 207 1100 ±30 5 780 100 50 3000
Unit V A V mΩ W A
APTM10HM05F
All ratings @ Tj = 25°C unl...
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