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APTM120A29FT Dataheets PDF



Part Number APTM120A29FT
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description MOSFET Power Module
Datasheet APTM120A29FT DatasheetAPTM120A29FT Datasheet (PDF)

APTM120A29FT Phase Leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for.

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APTM120A29FT Phase Leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile G1 S1 OUT Q2 G2 S2 0/VBUS NT C1 www.DataSheet4U.com G2 S2 OUT VB US 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120A29FT– Rev 0 Max ratings 1200 34 25 136 ±30 290 780 22 50 3000 Unit V A V mΩ W A mJ July, 2004 APTM120A29FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA Min 1200 VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ Max 200 1000 290 5 ±150 Unit V µA mΩ V nA VGS = 10V, ID = 17A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 34A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 34A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω Min Typ 10.3 1.54 0.26 374 48 240 20 15 160 45 1980 1371 3131 1714 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continu.


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