Document
APTM120A29FT
Phase Leg MOSFET Power Module
VBUS Q1 NT C2
VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C
Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile
G1
S1
OUT Q2
G2
S2 0/VBUS NT C1
www.DataSheet4U.com
G2 S2
OUT
VB US
0/VBUS
OUT
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120A29FT– Rev 0
Max ratings 1200 34 25 136 ±30 290 780 22 50 3000
Unit V A V mΩ W A mJ
July, 2004
APTM120A29FT
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA Min 1200
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C
Typ
Max 200 1000 290 5 ±150
Unit V µA mΩ V nA
VGS = 10V, ID = 17A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Turn-on Switching Energy X Turn-off Switching Energy Y
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 34A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 34A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω
Min
Typ 10.3 1.54 0.26 374 48 240 20 15 160 45 1980 1371 3131 1714
Max
Unit nF
nC
ns
µJ
µJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continu.