MOSFET Power Module
APTM120DA29T
Boost chopper MOSFET Power Module
VBUS CR1
VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C...
Description
APTM120DA29T
Boost chopper MOSFET Power Module
VBUS CR1
VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C
Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
OUT Q2
G2
S2 0/VBUS
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G2 S2
OUT
VBUS
0/VBUS
OUT
VBUS SENSE
S2 G2
NTC2 NTC1
Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120DA29T– Rev 0
July, 2004
Tc = 25°C
Max ratings 1200 34 25 136 ±30 290 780 22 50...
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