MOSFET Power Module
APTM120H57FT3
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = ...
Description
APTM120H57FT3
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
www.DataSheet4U.com
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C ...
Similar Datasheet