Document
APTM20AM06S
Phase leg Series & parallel diodes MOSFET Power Module
VDSS = 200V RDSon = 6mW max @ Tj = 25°C ID = 300A @ Tc = 25°C
Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
· ·
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G1 S1
VBUS
0/VBUS
OUT
· Benefits · · · ·
S2 G2
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 300 225 1200 ±30 6 1250 24 30 1300 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM20AM06S – Rev 1
May, 2004
Tc = 25°C
APTM20AM06S
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 1.5mA
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Tj = 25°C
Tj = 125°C
Min 200
Typ
Max 500 3 6 5 ±500
VGS = 10V, ID = 150A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V
3
Unit V µA mA mW V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω Min Typ 18.5 6.03 0.58 325 144 156 28 56 81 99 1543 1517 2027 1770 µJ µJ Max Unit nF
nC
ns
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V Unit A
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Qrr
Reverse Recovery Charge
nC
APT website – http://www.advancedpower.com
2-6
APTM20AM06S – Rev 1
May, 2004
trr
Reverse Recovery Time
ns
APTM20AM06S
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 130V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Min Transistor Diode serie Diode parallel 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 0.46 150 125 100 5 3.5 280 Max 1.15 V Unit A
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website – http://www.advancedpower.com
3-6
APTM20AM06S – Rev 1
May, 2004
APTM20AM06S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1000 ID, Drain Current (A) ID, Drain Current (A) 800 600 400
7V VGS=15 &
840 720 600 480 360 240 120 0
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle
8V
T J=125°C
200
6V
TJ=25°C
TJ=-55°C
0 0 2.5 5 7.5 10 12.5 15 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 100
VGS=20V VGS=10V
2
3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain.