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APTM20AM06S Dataheets PDF



Part Number APTM20AM06S
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description MOSFET Power Module
Datasheet APTM20AM06S DatasheetAPTM20AM06S Datasheet (PDF)

APTM20AM06S Phase leg Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = 6mW max @ Tj = 25°C ID = 300A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of .

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APTM20AM06S Phase leg Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = 6mW max @ Tj = 25°C ID = 300A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration · · www.DataSheet4U.com G1 S1 VBUS 0/VBUS OUT · Benefits · · · · S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 300 225 1200 ±30 6 1250 24 30 1300 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM20AM06S – Rev 1 May, 2004 Tc = 25°C APTM20AM06S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 1.5mA VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Tj = 25°C Tj = 125°C Min 200 Typ Max 500 3 6 5 ±500 VGS = 10V, ID = 150A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V 3 Unit V µA mA mW V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω Min Typ 18.5 6.03 0.58 325 144 156 28 56 81 99 1543 1517 2027 1770 µJ µJ Max Unit nF nC ns u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Qrr Reverse Recovery Charge nC APT website – http://www.advancedpower.com 2-6 APTM20AM06S – Rev 1 May, 2004 trr Reverse Recovery Time ns APTM20AM06S Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 130V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Min Transistor Diode serie Diode parallel 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 0.46 150 125 100 5 3.5 280 Max 1.15 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Package outline APT website – http://www.advancedpower.com 3-6 APTM20AM06S – Rev 1 May, 2004 APTM20AM06S Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse 0 0.00001 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1000 ID, Drain Current (A) ID, Drain Current (A) 800 600 400 7V VGS=15 & 840 720 600 480 360 240 120 0 Transfert Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 8V T J=125°C 200 6V TJ=25°C TJ=-55°C 0 0 2.5 5 7.5 10 12.5 15 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 100 VGS=20V VGS=10V 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain.


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