MOSFET Power Module
APTM20DHM08
Asymmetrical - bridge MOSFET Power Module
VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C
Appl...
Description
APTM20DHM08
Asymmetrical - bridge MOSFET Power Module
VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C
Application · · · Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
· · ·
OUT1 G1 S1 VBUS 0/VBUS
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Benefits · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
S4 G4 OUT2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 208 155 832 ±30 8 781 100 50 3000 Unit V A V mW W A mJ
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM20DHM08 – Rev 1 May, 2004
APTM20DHM08
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on...
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