MOSFET Power Module
APTM20DUM04
Dual common source MOSFET Power Module
VDSS = 200V RDSon = 4mW max @ Tj = 25°C ID = 372A @ Tc = 25°C
Applic...
Description
APTM20DUM04
Dual common source MOSFET Power Module
VDSS = 200V RDSon = 4mW max @ Tj = 25°C ID = 372A @ Tc = 25°C
Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - M5 power connectors · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Low profile
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G1 S1
D1
S
D2
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 372 278 1488 ±30 4 1250 100 50 3000 Unit V A V mW W A mJ
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM20DUM04 – Rev 1
May, 2004
APTM20DUM04
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero G...
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