MOSFET Power Module
APTM20DUM08TG
Dual common source MOSFET Power Module
VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C
Appli...
Description
APTM20DUM08TG
Dual common source MOSFET Power Module
VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C
Application
Q2
D1 Q1
D2
AC and DC motor control Switched Mode Power Supplies Power Factor Correction
Features
G2
G1
S1 S NTC1
S2
NTC2
G2 S2
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Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Benefits
D2
D1
S
D2
S1 G1
S2 G2
NTC2 NTC1
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Max ratings 200 208 155 832 ±30 10 781 100 50 3000 Unit V A V mΩ W A mJ
February, 2006 1–6 APTM20DUM08TG – Rev 3
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc= 25°C Tc = 80°C
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed...
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