APTM20UM09S

APTM20UM09S Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 200V RDSon = 9mΩ max @ Tj = 25°C ID = 195A @ Tc = 25°C Application · · · Motor control Switched Mode Power Supplies Uninterruptible Power Supplies S Q1 Features G · · · www.DataSheet4U.com · Benefits · · · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 195 145 780 ±30 9 780 65 30 1300 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM20UM09S – Rev 1 May, 2004 Tc = 25°C APTM20UM09S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Ga...