MOSFET Power Module
APTM50HM35F
Full - Bridge MOSFET Power Module
VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C
Application ...
Description
APTM50HM35F
Full - Bridge MOSFET Power Module
VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C
Application · · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
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OUT1 G1 S1 VBUS 0/VBUS G2 S2
· Benefits
S3 G3 OUT2
S4 G4
· · · ·
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 99 74 396 ±30 35 781 51 50 3000 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50HM35F– Rev 1 May, 2004
Tc = 25°C
APTM50HM35F
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ...
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