MOSFET Power Module
APTM50HM65FT
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C...
Description
APTM50HM65FT
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C
Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies
G1 S1 Q2 OUT1 OUT2 Q4
G3 S3
G2 S2 NTC1 0/VBU S NTC2
G4 S4
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Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 51 38 204 ±30 65 390 51 50 3000 Unit V A V mW W A mJ
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should...
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