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APTM50HM75SCT

Advanced Power Technology

MOSFET Power Module

APTM50HM75SCT Full bridge Series & SiC parallel diodes VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C App...


Advanced Power Technology

APTM50HM75SCT

File Download Download APTM50HM75SCT Datasheet


Description
APTM50HM75SCT Full bridge Series & SiC parallel diodes VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Q3 MOSFET Power Module VBUS CR1A CR3A Q1 CR1B CR3B G1 S1 CR2A OUT1 OUT2 CR4A G3 S3 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated · Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Q2 CR2B CR4B Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 www.DataSheet4U.com · · · · G3 S3 G4 S4 OUT2 Benefits · · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Max ratings 500 46 34 184 ±30 75 357 46 50 2500 Unit V A V mW W A mJ May, 2004 1–7 APTM50HM75SCT – Rev 1 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalan...




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