APTM50HM75SCT
Full bridge
Series & SiC parallel diodes
VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C
App...
APTM50HM75SCT
Full bridge
Series & SiC parallel diodes
VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C
Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies
Q3
MOSFET Power Module
VBUS CR1A CR3A
Q1
CR1B
CR3B
G1 S1 CR2A OUT1 OUT2 CR4A
G3 S3
Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated · Parallel SiC
Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Q2
CR2B
CR4B
Q4
G2 S2 NTC1 0/VBUS NTC2
G4 S4
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· · · ·
G3 S3 G4 S4 OUT2
Benefits · · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Max ratings 500 46 34 184 ±30 75 357 46 50 2500 Unit V A V mW W A mJ
May, 2004 1–7 APTM50HM75SCT – Rev 1
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalan...