APTM50UM25S

APTM50UM25S Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 500V RDSon = 25mΩ max @ Tj = 25°C ID = 149A @ Tc = 25°C Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies S Q1 Features G www.DataSheet4U.com Benefits Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50UM25S – Rev 1 June, 2004 Tc = 25°C Max ratings 500 149 110 550 ±30 25 1250 41 50 1600 Unit V A V mΩ W A APTM50UM25S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS...