Power Transistors
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
20.0±0.5
Unit: mm
φ ...
Power
Transistors
2SC5243
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current
www.DataSheet4U.com
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 1700 1700 6 15 30 10 200 3.5 150 –55 to +150 Unit V V V A A A W ˚C ˚C
2.7±0.3
Symbol VCBO VCES VEBO IC ICP* IBP PC Tj Tstg
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
1:Base 2:Collector 3:Emitter TOP–3L Package
Peak base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
*Non-repetitive
peak
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 12A, IB1 = 2.4A, IB2 = –4.8A, Resistance loaded 3 1.5 0.12 2.5 0.2 5 min typ max 1 50 12 3 1.5 V V MHz µs µs Unit µA µA
2.0
1.5
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO)
26.0±0.5
10.0
2.0
4.0
...
