MWE6IC9100GNR1

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.5 dB Power Added Efficiency — 54% GSM EDGE Application Typical GSM EDGE Performance: 870PmowAe, rPGouatin= 50 Watts Avg., — 35.5 dB Full VFDreDq=ue2n8cVyoBltasn, dID(Q8169=--293600 mMAH,zI)DQ2 = Power Added Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = --63 dBc Spectral Regrowth @ 600 kHz Offset = --81 dBc EVM — 2% rms Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 120 W CW Pout. Features Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MWE6IC9100N Rev. 3, 12/2008 MWE6IC9100NR1 MWE6IC...