Document
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on--chip
matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Final Application
• Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.5 dB Power Added Efficiency — 54%
GSM EDGE Application
•
Typical GSM EDGE Performance:
870PmowAe, rPGouatin=
50 Watts Avg., — 35.5 dB
Full
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mMAH,zI)DQ2
=
Power Added Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = --63 dBc
Spectral Regrowth @ 600 kHz Offset = --81 dBc
EVM — 2% rms
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
• Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 120 W CW Pout.
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MWE6IC9100N Rev. 3, 12/2008
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
960 MHz, 100 W, 26 V GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1618--02 TO--270 WB--14
PLASTIC MWE6IC9100NR1
CASE 1621--02 TO--270 WB--14 GULL
PLASTIC MWE6IC9100GNR1
CASE 1617--02 TO--272 WB--14
PLASTIC MWE6IC9100NBR1
VDS1
RFin
VGS1 VGS2 VDS1
Quiescent Current Temperature Compensation (1)
RFout/VDS2
NC VDS1
NC NC NC RFin RFin NC VGS1 VGS2 VDS1 NC
1
2
3 4
14
5
6
7
8
9 13
10
11
12
(Top View)
RFout /VDS2 RFout /VDS2
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2007--2008. All rights reserved.
RF Device Data Freescale Semiconductor
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 1
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Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case
Symbol VDSS VGS Tstg TC TJ
Symbol RθJC
Value --0.5, +66 --0.5, +6 --65 to +150
150 225
Value (2,3)
Unit Vdc Vdc °C °C °C
Unit °C/W
GSM Application (Pout = 100 W CW)
Stage 1, 26 Vdc, IDQ1 = 120 mA Stage 2, 26 Vdc, IDQ2 = 950 mA
1.82 0.38
GSM EDGE Application (Pout = 50 W Avg.)
Stage 1, 28 Vdc, IDQ1 = 230 mA Stage 2, 28 Vdc, IDQ2 = 870 mA
Table 3. ESD Protection Characteristics
1.77 0.44
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 μAdc
IDSS
—
—
1 μAdc
IGSS
—
—
10 μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage (VDS = 10 Vdc, ID = 35 μAdc)
VGS(th)
1.5
2
3.5 Vdc
Gate Quiescent Voltage (VDS = 26 Vdc, ID = 120 mAdc)
VGS(Q)
—
2.7
— Vdc
Fixture Gate Quiescent Voltage (VDD = 26 Vdc, ID = 120 mAdc, Measured in Functional Test)
VGG(Q)
6
9.4 12 Vdc
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 2
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION ARCHIVE INFORMATION
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current (VD.