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MWE6IC9100NBR1 Dataheets PDF



Part Number MWE6IC9100NBR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet MWE6IC9100NBR1 DatasheetMWE6IC9100NBR1 Datasheet (PDF)

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application • Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Pow.

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application • Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.5 dB Power Added Efficiency — 54% GSM EDGE Application • Typical GSM EDGE Performance: 870PmowAe, rPGouatin= 50 Watts Avg., — 35.5 dB Full VFDreDq=ue2n8cVyoBltasn, dID(Q8169=--293600 mMAH,zI)DQ2 = Power Added Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = --63 dBc Spectral Regrowth @ 600 kHz Offset = --81 dBc EVM — 2% rms • Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 120 W CW Pout. Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MWE6IC9100N Rev. 3, 12/2008 MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618--02 TO--270 WB--14 PLASTIC MWE6IC9100NR1 CASE 1621--02 TO--270 WB--14 GULL PLASTIC MWE6IC9100GNR1 CASE 1617--02 TO--272 WB--14 PLASTIC MWE6IC9100NBR1 VDS1 RFin VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) RFout/VDS2 NC VDS1 NC NC NC RFin RFin NC VGS1 VGS2 VDS1 NC 1 2 3 4 14 5 6 7 8 9 13 10 11 12 (Top View) RFout /VDS2 RFout /VDS2 Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007--2008. All rights reserved. RF Device Data Freescale Semiconductor MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 1 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol VDSS VGS Tstg TC TJ Symbol RθJC Value --0.5, +66 --0.5, +6 --65 to +150 150 225 Value (2,3) Unit Vdc Vdc °C °C °C Unit °C/W GSM Application (Pout = 100 W CW) Stage 1, 26 Vdc, IDQ1 = 120 mA Stage 2, 26 Vdc, IDQ2 = 950 mA 1.82 0.38 GSM EDGE Application (Pout = 50 W Avg.) Stage 1, 28 Vdc, IDQ1 = 230 mA Stage 2, 28 Vdc, IDQ2 = 870 mA Table 3. ESD Protection Characteristics 1.77 0.44 Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22--A113, IPC/JEDEC J--STD--020 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS — — 10 μAdc IDSS — — 1 μAdc IGSS — — 10 μAdc Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 35 μAdc) VGS(th) 1.5 2 3.5 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 120 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 26 Vdc, ID = 120 mAdc, Measured in Functional Test) VGG(Q) 6 9.4 12 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VD.


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