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CDBF0520L Dataheets PDF



Part Number CDBF0520L
Manufacturers Comchip Technology
Logo Comchip Technology
Description SMD Schottky Barrier Diode
Datasheet CDBF0520L DatasheetCDBF0520L Datasheet (PDF)

SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0520L I O = 500 mA V R = 20 Volt s Features Low forward Voltage (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 1005(2512) 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical data Case: SOD-323F (2512) Standard package , molded plastic. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity.

  CDBF0520L   CDBF0520L


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SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0520L I O = 500 mA V R = 20 Volt s Features Low forward Voltage (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 1005(2512) 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical data Case: SOD-323F (2512) Standard package , molded plastic. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. 0.012 (0.30) Typ. Mounting position: Any. 0.020(0.50) Typ. Weight: 0.006 gram (approximately). Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR IO I FSM T STG Tj -40 -40 20 20 0.5 5.5 +125 +125 V V A A C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage I F = 100mA I F = 500mA I F = 100mA I F = 500mA V R = 10V V R = 20V Conditions @Ta=25 @Ta=25 @Ta=100 @Ta=100 @Ta=25 @Ta=25 C C C C C C Symbol Min Typ Max Unit VF VF VF VF IR IR CT T rr 22 300 385 220 330 75 250 170 mV mV mV mV uA uA pF ns Reverse current Capacitance between terminals f = 1MHz, and 0 VDC reverse voltage Reverse recovery time I F =I R =10mA,Irr= 0.1 X I R ,R L =100 ohm REV:A QW-A1039 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0520L) Fig. 1 - Forward characteristics 1000 Fig. 2 - Reverse characteristics 100m 75 C Forward current (mA ) 100 C Reverse current ( A ) 10m 1m 125 C 75 C -2 5 25 C 10 100u 25 C 10u -25 C 1 1u 0.1u 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.0 10 20 30 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals(pF) 120 Fig. 4 - Current derating curve 120 Average forward current ( % ) f=1MHz Ta = 25 C 100 100 80 80 60 60 40 40 20 20 0 0 5 10 15 20 0 0 25 50 75 100 125 150 Reverse voltage : (V) Ambient temperature ( C ) REV:A QW-A1039 Page 2 .


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