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CDBFR001A

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR001A (RoHs Device) Preliminary Io = 100mA V R = 30 Volts Features...


Comchip Technology

CDBFR001A

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR001A (RoHs Device) Preliminary Io = 100mA V R = 30 Volts Features Designed for mounting on small surface. Extremely thin package. Low stored charge. Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.006 gram(approx.). 0.040(1.00) Typ. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive Peak reverse voltage Average forward current Forward current,surge peak Power Dissipation Sunction temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM , V R IO 30 100 500 150 -40 +125 +125 V mA mA mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage 1 Forward voltage 2 Forward voltage 3 Forward voltage 4 Forward voltage 5 Reverse current Capacitance between terimnals Conditions I F = 0.1 mA DC I F = 1 mA DC I F = 10 mA DC I F = 30 mA DC I F = 100 mA DC V R = 25V F = 1 MHZ and 10 VDC reverse voltage Symbol Min Typ Max Unit VF VF VF VF VF IR CT 0.24 0.32 0.40 0.50 1.00 2 6 V V V V V uA pF REV:A QW-A1053 Page 1 SMD Schottky Barrier ...




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