Document
SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBFR0130 (RoHs Device)
Io = 100 mA V R = 30 Volts Features
Designed for mounting on small surface. Extremely thin package. Low stored charge. Majority carrier conduction.
0.051(1.30) 0.043(1.10)
1005(2512)
0.102(2.60) 0.095(2.40)
Mechanical data
Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.006 gram(approx.).
0.040(1.00) Typ. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70)
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Sunction temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
V RRM VR IO 35 30 100 1000 250 -40 +125 +125 V V mA mA mW
O
8.3 ms single half sine-wave superimposed on rate load(JEDEC method)
I FSM PD T STG Tj
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current Capacitance between terimnals V R = 30V
Conditions
I F = 100 mA DC
Symbol Min Typ Max Unit
VF IR CT 9 0.44 30 V uA pF
F = 1 MHZ and 10 VDC reverse voltage
REV:A
QW-A1057
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SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBFR0130)
Fig. 1 - Forward characteristics
1000 10m 1m
Fig. 2 - Reverse characteristics
100
Reverse current ( A )
Forward current (mA )
125 C
O
100u
75 C
O
10
10u 1u
25 C
O
1
5 O C
C
O
C
12
75
25
-25
0.1
C
O
O
100n 10n 1n
O
0.01
-25 C
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between terminals characteristics
Capacitance between terminals ( P F)
100
Fig.4 - Current derating curve
Mounting on glass epoxy PCBs
Average forward current(%)
35
f = 1 MHz Ta = 25 C
100
80
10
60
40
20
1
0 5 10
15
0
20
25
30
0
25
50
75
100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:A
QW-A1057
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